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Nanoindentation of Si3N4 for microelectronic Underlayer influence [Nanoindentation du Si3N4 pour la microelectronique influence de la sous-couche]

Résumé : In order to protect microelectronic structures, a silicon nitride (Si3N4) film is typically used as the final passivation layer. During the Back End process, wafer processing steps such as thinning, bonding, sawing or assembly could induce several mechanical strains in the materials. In this paper, the mechanical behavior of Si3N4 deposited on two under layers SiO2 and Al98.96Si1.00Cu0.04, from the same silicon wafer, is investigated by nanoindentation. The load-displacement curves indicate different mechanical behaviors. The unloading curve shows mainly viscoelastic deformation for the Si3N4/SiO2 system. Deposited on AlSiCu, the sample exhibits a plastic deformation with pop in, when the indenter penetrates into the material. Residual indents measured with an atomic force microscope, after nanoindentation, present significant shape differences, for the under layer AlSiCu the indentation induces cracks. © 2015 EDP Sciences.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02184114
Contributor : Elisabeth van T Hof <>
Submitted on : Monday, July 15, 2019 - 6:04:27 PM
Last modification on : Wednesday, December 4, 2019 - 10:22:03 AM

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Rosine Coq Germanicus, S. Eve, F. Lallemand, E. Hug. Nanoindentation of Si3N4 for microelectronic Underlayer influence [Nanoindentation du Si3N4 pour la microelectronique influence de la sous-couche]. Materiaux et Techniques, 2015, 103 (6), pp.606. ⟨10.1051/mattech/2015052⟩. ⟨hal-02184114⟩

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