SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

Niemat Moultif; Eric Joubert; Olivier Latry

SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

Niemat Moultif ¹ Eric Joubert ¹ Olivier Latry ¹

1 GPM - Groupe de physique des matériaux

Abstract : This paper aims to study the SiC power MOSFETs robustness to Electrostatic Discharge (ESD), by photon emission using spectral photoemission technique (SPE). Investigations in photoemission PE reveal the degradation signature. SPE analyses are performed to identify the failure mechanism. The ESD degradation is seems to be related to oxide degradation. C-V analyses are conducted to prove this hypothesis.

Type de document :

Communication dans un congrès

Domaine :

Physique [physics] / Matière Condensée [cond-mat] / Science des matériaux [cond-mat.mtrl-sci]

Liste complète des métadonnées

https://hal-normandie-univ.archives-ouvertes.fr/hal-02181679
Contributeur : Etienne Talbot <>
Soumis le : vendredi 12 juillet 2019 - 12:15:30
Dernière modification le : lundi 26 août 2019 - 14:12:19

SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

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SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

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