SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations

Abstract : This paper aims to study the SiC power MOSFETs robustness to Electrostatic Discharge (ESD), by photon emission using spectral photoemission technique (SPE). Investigations in photoemission PE reveal the degradation signature. SPE analyses are performed to identify the failure mechanism. The ESD degradation is seems to be related to oxide degradation. C-V analyses are conducted to prove this hypothesis.
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Communication dans un congrès
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02181679
Contributeur : Etienne Talbot <>
Soumis le : vendredi 12 juillet 2019 - 12:15:30
Dernière modification le : lundi 26 août 2019 - 14:12:19

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Niemat Moultif, Eric Joubert, Olivier Latry. SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩. ⟨hal-02181679⟩

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