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Experimental study of 600V GaN transistor under the short-circuit aging tests

J-Z. Fu 1 F. Fouquet 1 M. Kadi 1 Pascal Dherbécourt 2
1 ESIGELEC - École Supérieure d’Ingénieurs en Génie Électrique
2 GPM - Groupe de physique des matériaux
Abstract : This paper presents experimental short-circuit aging tests of a 600V GaN (Gallium nitrite) GIT (Gate Injection Transistor). The short circuit aging tests effect under the drain voltage of 35 V and the two short-circuit durations (1.1ms, 1.9ms) are investigated. The degradation mode due to different energy applied during the short circuit aging tests is well shown in this paper. A comparison with a SiC (Silicon carbide) Technology transistor, subject to equivalent aging test, is proposed in the paper.
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Conference papers
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02181678
Contributor : Etienne Talbot <>
Submitted on : Friday, July 12, 2019 - 12:14:46 PM
Last modification on : Tuesday, September 8, 2020 - 2:14:20 PM

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COMUE-NORMANDIE | CNRS | GPM | INSA-ROUEN | UNIROUEN | INSA-GROUPE | ESIGELEC

Citation

J-Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt. Experimental study of 600V GaN transistor under the short-circuit aging tests. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.249-253, ⟨10.1109/MELCON.2018.8379102⟩. ⟨hal-02181678⟩

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