Experimental study of 600V GaN transistor under the short-circuit aging tests

J-Z. Fu (1) , F. Fouquet (1) , M. Kadi (1) , Pascal Dherbécourt (2)

1 ESIGELEC - École Supérieure d’Ingénieurs en Génie Électrique
2 GPM - Groupe de physique des matériaux

This paper presents experimental short-circuit aging tests of a 600V GaN (Gallium nitrite) GIT (Gate Injection Transistor). The short circuit aging tests effect under the drain voltage of 35 V and the two short-circuit durations (1.1ms, 1.9ms) are investigated. The degradation mode due to different energy applied during the short circuit aging tests is well shown in this paper. A comparison with a SiC (Silicon carbide) Technology transistor, subject to equivalent aging test, is proposed in the paper.

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

J-Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt. Experimental study of 600V GaN transistor under the short-circuit aging tests. 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.249-253, ⟨10.1109/MELCON.2018.8379102⟩. ⟨hal-02181678⟩