Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests

Abstract : In this article, a repetitive and non-destructive short-circuit aging test is developed to characterize the electrical parameters evolutions of a 600 V GaN Gate Injection Transistor (GIT). The evolutions of C-V and I-V characteristics during the repetitive short-circuit tests with a relatively low bias voltage and long pulse duration are presented and summarized. The capacitance CGD at on-state mode and the gate current at relative high gate voltage show significant degradations before and after test.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02181673
Contributeur : Etienne Talbot <>
Soumis le : vendredi 12 juillet 2019 - 12:07:16
Dernière modification le : vendredi 4 octobre 2019 - 10:44:02

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J.Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt. Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. Microelectronics Reliability, Elsevier, 2018, 88-90, pp.652-655. ⟨10.1016/j.microrel.2018.06.034⟩. ⟨hal-02181673⟩

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