Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests

J.Z. Fu (1) , F. Fouquet (1) , M. Kadi (1) , Pascal Dherbécourt (2)

1 ESIGELEC - École Supérieure d’Ingénieurs en Génie Électrique
2 GPM - Groupe de physique des matériaux

In this article, a repetitive and non-destructive short-circuit aging test is developed to characterize the electrical parameters evolutions of a 600 V GaN Gate Injection Transistor (GIT). The evolutions of C-V and I-V characteristics during the repetitive short-circuit tests with a relatively low bias voltage and long pulse duration are presented and summarized. The capacitance CGD at on-state mode and the gate current at relative high gate voltage show significant degradations before and after test.

Keywords: Short-circuit; GaN; Aging test; I-V and C-V characteristics

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

J.Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt. Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. Microelectronics Reliability, 2018, 88-90, pp.652-655. ⟨10.1016/j.microrel.2018.06.034⟩. ⟨hal-02181673⟩