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3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs

Abstract : The 3D compositional distribution at the atomic-scale of InAs/GaAs quantum dots (QDs) with an InAlGaAs capping layer has been obtained by atom probe tomography. A heterogeneous distribution of Al atoms has been revealed. An Al-rich ring around the QDs has been observed. A detailed analysis of the QDs composition evidences a high degree of In/Ga intermixing, with an increasing In gradient in the growth direction. The atomic scale analyses of these nanostructures are essential to understand their functional properties.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02177759
Contributeur : Etienne Talbot <>
Soumis le : mardi 9 juillet 2019 - 12:50:41
Dernière modification le : lundi 27 avril 2020 - 11:35:54

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J. Hernández-Saz, M. Herrera, S.I. Molina, C.R. Stanley, S. Duguay. 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs. Scripta Materialia, Elsevier, 2015, 103, pp.73-76. ⟨10.1016/j.scriptamat.2015.03.013⟩. ⟨hal-02177759⟩

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