3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs

J. Hernández-Saz (1) , M. Herrera (1) , S.I. Molina (1) , C.R. Stanley (2) , S. Duguay (3)

1 University of Cadiz
2 James Watt School of Engineering [Univ Glasgow]
3 GPM - Groupe de physique des matériaux

The 3D compositional distribution at the atomic-scale of InAs/GaAs quantum dots (QDs) with an InAlGaAs capping layer has been obtained by atom probe tomography. A heterogeneous distribution of Al atoms has been revealed. An Al-rich ring around the QDs has been observed. A detailed analysis of the QDs composition evidences a high degree of In/Ga intermixing, with an increasing In gradient in the growth direction. The atomic scale analyses of these nanostructures are essential to understand their functional properties.

Keywords: Atom probe tomography; Semiconductors; Quantum dots; Epitaxial growth

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

J. Hernández-Saz, M. Herrera, S.I. Molina, C.R. Stanley, S. Duguay. 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs. Scripta Materialia, 2015, 103, pp.73-76. ⟨10.1016/j.scriptamat.2015.03.013⟩. ⟨hal-02177759⟩