An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

Abstract : TbxDy1-xFe2/Pt/Pb(Zrx,Ti1-x)O-3 thin films grown on Pt/TiO2/SiO2/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient alpha(H)(ME) was determined at room temperature using a lock -in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large alpha(H)(ME) of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance.(C) 2016 Elsevier B.V.All rights reserved.
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Soumis le : vendredi 5 juillet 2019 - 17:03:00
Dernière modification le : mercredi 28 août 2019 - 12:50:05

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Gilles Poullain, Joris More-Chevalier, Christophe Cibert, Rachid Bouregba. An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices. Journal of Magnetism and Magnetic Materials, Elsevier, 2017, 422, pp.344-347. ⟨10.1016/jrninsit2016.09.015⟩. ⟨hal-02175453⟩

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