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An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

Gilles Poullain 1, 2 Joris More-Chevalier 1, 2 Christophe Cibert 1, 2 Rachid Bouregba 1, 2 
1 LaMIPS - Laboratoire de Microélectronique et de Physique des Semiconducteurs
CRISMAT - Laboratoire de cristallographie et sciences des matériaux, NXP Semiconductors [France], Presto Engineering Europe
Abstract : TbxDy1-xFe2/Pt/Pb(Zrx,Ti1-x)O-3 thin films grown on Pt/TiO2/SiO2/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient alpha(H)(ME) was determined at room temperature using a lock -in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large alpha(H)(ME) of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance.(C) 2016 Elsevier B.V.All rights reserved.
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Submitted on : Friday, July 5, 2019 - 5:03:00 PM
Last modification on : Saturday, June 25, 2022 - 9:53:39 AM

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Gilles Poullain, Joris More-Chevalier, Christophe Cibert, Rachid Bouregba. An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices. Journal of Magnetism and Magnetic Materials, Elsevier, 2017, 422, pp.344-347. ⟨10.1016/j.jmmm.2016.09.015⟩. ⟨hal-02175453⟩

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