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Journal articles
Caractérisation par nanoindentation du GaN irradié par des ions uranium de grande énergie
Caractérisation par nanoindentation du GaN irradié par des ions uranium de grande énergie
Abstract : The mechanical behavior of thin films of gallium nitride GaN, irradiated with swift heavy uranium ions, has been investigated by nanoindentation. Results show a decrease of the mechanical properties of the material due to irradiation, correlated to the increase of the fluency of the U ions. The growing disturbance of the GaN crystalline lattice caused by irradiation results in a change in the deformation mechanisms of the material. Highly disordered zones obstruct the dislocation motion, leading to the dislocations pile-up at the film/substract interface, and a consecutive increase of the hardness. Up to a fluency of 10(13) ions/cm(2), the recovering of the latent tracks created along the paths of the rapidly moving ions brings a significant drop of the mechanical properties of the GaN films, correlated with a homogenization of the behavior of the materials irradiated with elevated fluencies.
Cited literature [24 references]
https://hal-normandie-univ.archives-ouvertes.fr/hal-02175450
Contributor : Elisabeth van T Hof <>
Submitted on : Wednesday, August 19, 2020 - 8:02:50 PM
Last modification on : Friday, August 21, 2020 - 11:37:17 AM
Contributor : Elisabeth van T Hof <>
Submitted on : Wednesday, August 19, 2020 - 8:02:50 PM
Last modification on : Friday, August 21, 2020 - 11:37:17 AM
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mt160098.pdf
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