Characterization by nanoindentation of GaN irradiated by high energy uranium ions

Résumé : The mechanical behavior of thin films of gallium nitride GaN, irradiated with swift heavy uranium ions, has been investigated by nanoindentation. Results show a decrease of the mechanical properties of the material due to irradiation, correlated to the increase of the fluency of the U ions. The growing disturbance of the GaN crystalline lattice caused by irradiation results in a change in the deformation mechanisms of the material. Highly disordered zones obstruct the dislocation motion, leading to the dislocations pile-up at the film/substract interface, and a consecutive increase of the hardness. Up to a fluency of 10(13) ions/cm(2), the recovering of the latent tracks created along the paths of the rapidly moving ions brings a significant drop of the mechanical properties of the GaN films, correlated with a homogenization of the behavior of the materials irradiated with elevated fluencies.
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Contributeur : Elisabeth van T Hof <>
Soumis le : vendredi 5 juillet 2019 - 17:02:47
Dernière modification le : samedi 6 juillet 2019 - 01:30:37

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Sophie Eve, Florent Moisy, Rosine Coq Germanicus, Clara Grygiel, Eric Hug, et al.. Characterization by nanoindentation of GaN irradiated by high energy uranium ions. Matériaux & Techniques, EDP Sciences, 2017, 105 (1), ⟨10.1051/mattech/2017008⟩. ⟨hal-02175450⟩

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