Thermoelectric anisotropy and texture of intercalated TiS2

E. Guilmeau (1, 2) , T. Barbier (2, 1) , A. Maignan (1) , D. Chateigner (2, 1)

1 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
2 LaMIPS - Laboratoire de Microélectronique et de Physique des Semiconducteurs

This study addresses the effect of anisotropy on the electrical and thermal properties of CuxTiS2 compounds. We show that the anisotropy of the electrical resistivity (rho(cross-plane)/rho(in-plane) > 1) tends to be reduced as the covalent character along c is increased with the Cu content. For all x values (x <= 0.1), the absolute value of S is always found to be higher in-plane than in the cross-plane direction due to band structure anisotropy, leading to higher in-plane power factor values. Interestingly, the kappa(in-plane)/kappa(cross-plane) thermal conductivity ratio, with values similar to the only data reported for TiS2 crystals, are always higher than rho(cross-plane)/rho(in-plane). This anisotropy relation leads to equivalent zT values for the in-plane and cross-plane directions, reaching 0.35-0.5 at 800K. Published by AIP Publishing.

Domaines: Chimie; Cristallographie; Matériaux; Chimie théorique et/ou physique

E. Guilmeau, T. Barbier, A. Maignan, D. Chateigner. Thermoelectric anisotropy and texture of intercalated TiS2. Applied Physics Letters, 2017, 111 (13), pp.133903. ⟨10.1063/1.4998952⟩. ⟨hal-02175435⟩