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Thermoelectric anisotropy and texture of intercalated TiS2

E. Guilmeau 1, 2 T. Barbier 2, 1 A. Maignan 1 D. Chateigner 2, 1 
2 LaMIPS - Laboratoire de Microélectronique et de Physique des Semiconducteurs
CRISMAT - Laboratoire de cristallographie et sciences des matériaux, NXP Semiconductors [France], Presto Engineering Europe
Abstract : This study addresses the effect of anisotropy on the electrical and thermal properties of CuxTiS2 compounds. We show that the anisotropy of the electrical resistivity (rho(cross-plane)/rho(in-plane) > 1) tends to be reduced as the covalent character along c is increased with the Cu content. For all x values (x <= 0.1), the absolute value of S is always found to be higher in-plane than in the cross-plane direction due to band structure anisotropy, leading to higher in-plane power factor values. Interestingly, the kappa(in-plane)/kappa(cross-plane) thermal conductivity ratio, with values similar to the only data reported for TiS2 crystals, are always higher than rho(cross-plane)/rho(in-plane). This anisotropy relation leads to equivalent zT values for the in-plane and cross-plane directions, reaching 0.35-0.5 at 800K. Published by AIP Publishing.
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Submitted on : Friday, July 5, 2019 - 5:01:54 PM
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E. Guilmeau, T. Barbier, A. Maignan, D. Chateigner. Thermoelectric anisotropy and texture of intercalated TiS2. Applied Physics Letters, American Institute of Physics, 2017, 111 (13), pp.133903. ⟨10.1063/1.4998952⟩. ⟨hal-02175435⟩



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