Capacitance-voltage characteristics of sub-nanometric Al2O3/TiO2 laminates dielectric and interface charge densities

Abstract : Advanced amorphous sub-nanometric laminates based on TiO2 and Al2O3 were deposited by atomic layer deposition at low temperature. Low densities of 'slow' and 'fast' interface states are achieved with values of 3.96 . 10(10) cm(-2) and 4.85 . 10(-9) eV(-1) cm(-2), respectively, by using a 40 nm laminate constituted of 0.7 nm TiO2 and 0.8 nm Al2O3. The sub-nanometric laminate shows a low hysteresis width of 20 mV due to the low oxide charge density of about 3.72 . 10(11) cm(-2). Interestingly, such properties are required for stable and reliable performance of MOS capacitors and transistor operation. Thus, decreasing the individual layer thickness to the sub-nanometric range and combining two dielectric materials with oppositely charged defects may play a major role in the electrical response, highly promising for the application in future micro and nano-electronics applications.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02175403
Contributeur : Elisabeth van T Hof <>
Soumis le : vendredi 5 juillet 2019 - 17:00:38
Dernière modification le : mercredi 28 août 2019 - 12:50:05

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Abdelkader Kahouli, Marwa Ben Elbahri, Oleg Lebedev, Ulrike Luders. Capacitance-voltage characteristics of sub-nanometric Al2O3/TiO2 laminates dielectric and interface charge densities. Journal of Physics: Condensed Matter, IOP Publishing, 2017, 29 (27), ⟨10.1088/1361-648X⟩. ⟨hal-02175403⟩

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