The role of oxygen vacancies on the weak localization in LaNiO3-delta epitaxial thin films

P. Walke (1, 2) , S. Gupta (2) , Q. R. Li (1, 3) , M. Major (3) , W. Donner (3) , B. Mercey (1) , U. Luders (1)

1 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
2 MU - University of Mumbai
3 TU Darmstadt - Technische Universität Darmstadt - Technical University of Darmstadt

We report on the analysis of weak localization observed in epitaxial films of LaNiO3-delta deposited coherently on SrTiO3 (001) substrates using different oxygen pressures, controlling thus the oxygen stoichiometry delta. The structural and transport properties of 10 nm thick LaNiO3-delta films were investigated. In the films deposited under the lowest oxygen pressures, we observe localization effects at low temperatures, indicating first a high structural quality of the films, and second an influence of the growth conditions on the quantum transport properties of the nickelate. We will discuss the origin as well as the dimensionality of this effect, giving insight into novel and accurate strategies for the design of ultrathin LaNiO3 electrodes for improved next generation electronics devices.

Mots clés: Weak localization; Epitaxial film; Stoichiometry; Quantum transport

Domaines: Matériaux

P. Walke, S. Gupta, Q. R. Li, M. Major, W. Donner, et al.. The role of oxygen vacancies on the weak localization in LaNiO3-delta epitaxial thin films. Journal of Physics and Chemistry of Solids, 2018, 123, pp.1-5. ⟨10.1016/j.jpcs.2018.07.003⟩. ⟨hal-02174413⟩