Static behavior analysis of silicon carbide power MOSFET for temperature variations

Wadia Jouha; Pascal Dherbécourt; Eric Joubert; Ahmed El Oualkadi

Static behavior analysis of silicon carbide power MOSFET for temperature variations

Wadia Jouha ¹ Pascal Dherbécourt ¹ Eric Joubert ¹ Ahmed El Oualkadi ²

1 GPM - Groupe de physique des matériaux

2 LAII - Laboratoire d'Automatique et d'Informatique Industrielle

Abstract : This paper proposes an analysis of the static behavior of a SiC-MOSFET power transistor for temperature variations. The commercial transistor model (CMF10120D Cree 1200V/24A) is used. The approach consists to exploit the Spice electrical model provided by the constructor and to set its limits. Two main parameters: the threshold voltage and mobility are investigated to meet the needs of the static study and refine the temperature behavior of the Spice model. The obtained simulation results are compared to experimental measurements achieved in a static athermal mode.

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Liste complète des métadonnées

https://hal-normandie-univ.archives-ouvertes.fr/hal-02173722
Contributeur : Eric Joubert <>
Soumis le : jeudi 4 juillet 2019 - 16:21:43
Dernière modification le : mercredi 9 octobre 2019 - 15:13:12

Static behavior analysis of silicon carbide power MOSFET for temperature variations

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Static behavior analysis of silicon carbide power MOSFET for temperature variations

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