 |
Communication dans un congrès
Static behavior analysis of silicon carbide power MOSFET for temperature variations
Abstract : This paper proposes an analysis of the static behavior of a SiC-MOSFET power transistor for temperature variations. The commercial transistor model (CMF10120D Cree 1200V/24A) is used. The approach consists to exploit the Spice electrical model provided by the constructor and to set its limits. Two main parameters: the threshold voltage and mobility are investigated to meet the needs of the static study and refine the temperature behavior of the Spice model. The obtained simulation results are compared to experimental measurements achieved in a static athermal mode.
https://hal-normandie-univ.archives-ouvertes.fr/hal-02173722
Contributeur : Eric Joubert <>
Soumis le : jeudi 4 juillet 2019 - 16:21:43
Dernière modification le : mardi 7 janvier 2020 - 09:04:02
Contributeur : Eric Joubert <>
Soumis le : jeudi 4 juillet 2019 - 16:21:43
Dernière modification le : mardi 7 janvier 2020 - 09:04:02
