Static behavior analysis of silicon carbide power MOSFET for temperature variations

Wadia Jouha (1, 2) , Pascal Dherbécourt (1) , Eric Joubert (1) , Ahmed El Oualkadi (2)

1 GPM - Groupe de physique des matériaux
2 Labtic - Laboratoire des Technologies de l'Information et de la Communication

This paper proposes an analysis of the static behavior of a SiC-MOSFET power transistor for temperature variations. The commercial transistor model (CMF10120D Cree 1200V/24A) is used. The approach consists to exploit the Spice electrical model provided by the constructor and to set its limits. Two main parameters: the threshold voltage and mobility are investigated to meet the needs of the static study and refine the temperature behavior of the Spice model. The obtained simulation results are compared to experimental measurements achieved in a static athermal mode.

Domains: Engineering Sciences [physics]; Electronics

Wadia Jouha, Pascal Dherbécourt, Eric Joubert, Ahmed El Oualkadi. Static behavior analysis of silicon carbide power MOSFET for temperature variations. 2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩. ⟨hal-02173722⟩