Journal Articles
Diamond and Related Materials
Year : 2014
Etienne Talbot : Connect in order to contact the contributor
https://hal-normandie-univ.archives-ouvertes.fr/hal-02156382
Submitted on : Friday, June 14, 2019-12:47:12 PM
Last modification on : Wednesday, February 8, 2023-5:11:07 PM
Dates and versions
Identifiers
- HAL Id : hal-02156382 , version 1
- DOI : 10.1016/j.diamond.2014.02.002
Cite
P. Denis, Pascal Dherbécourt, O. Latry, C. Genevois, F. Cuvilly, et al.. Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis. Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩. ⟨hal-02156382⟩
Collections
32
View
0
Download