Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

P. Denis (1) , Pascal Dherbécourt (1) , O. Latry (1) , C. Genevois (1) , F. Cuvilly (1) , Martin Brault (1) , M. Kadi (2)

1 GPM - Groupe de physique des matériaux
2 IRSEEM - Institut de Recherche en Systèmes Electroniques Embarqués

Domains: Physics [physics]

P. Denis, Pascal Dherbécourt, O. Latry, C. Genevois, F. Cuvilly, et al.. Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis. Diamond and Related Materials, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩. ⟨hal-02156382⟩