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Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02156382
Contributor : Etienne Talbot <>
Submitted on : Friday, June 14, 2019 - 12:47:12 PM
Last modification on : Thursday, April 9, 2020 - 1:46:17 PM

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P. Denis, Pascal Dherbécourt, O. Latry, C. Genevois, F. Cuvilly, et al.. Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses : An in-depth failure analysis. Diamond and Related Materials, Elsevier, 2014, 44, pp.62-70. ⟨10.1016/j.diamond.2014.02.002⟩. ⟨hal-02156382⟩

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