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Lattice and grain-boundary diffusion of As in Ni2Si

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02127829
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Submitted on : Monday, May 13, 2019 - 5:21:24 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM

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Ivan Blum, A. Portavoce, Dominique Mangelinck, Rachid Daineche, K. Hoummada, et al.. Lattice and grain-boundary diffusion of As in Ni2Si. Journal of Applied Physics, American Institute of Physics, 2008, 104 (11), pp.114312. ⟨10.1063/1.3035836⟩. ⟨hal-02127829⟩

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