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Journal articles
Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography
Abstract : Structural properties of undoped, As-doped, and P-doped silicon nanocrystals (Si-Ncs) embedded in a SiO 2 matrix have been investigated using atom probe tomography. It turns out that both As and P atomic distributions have the same behavior in such system, withthe efficient incorporation of impurities in the core of Si-Ncs even in the smallest ones (<2 nm). The impurity level measured in Si-Ncs is strongly size-dependent, and statistically, the smallest Si-Ncs can contain the heaviest doping composition. Moreover, this study reveals an influence of the dopant nature on the kinetic growth of Si-Ncs, leading to the clustering of larger nanocrystals in P-doped samples.
Cited literature [53 references]
https://hal-normandie-univ.archives-ouvertes.fr/hal-02082140
Contributor : Etienne Talbot <>
Submitted on : Thursday, May 7, 2020 - 11:45:46 AM
Last modification on : Friday, May 15, 2020 - 2:01:47 PM
Contributor : Etienne Talbot <>
Submitted on : Thursday, May 7, 2020 - 11:45:46 AM
Last modification on : Friday, May 15, 2020 - 2:01:47 PM
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2019_Demoulin_JPCC.pdf
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