Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography - Normandie Université Accéder directement au contenu
Article Dans Une Revue Journal of Physical Chemistry C Année : 2019

Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

Résumé

Structural properties of undoped, As-doped, and P-doped silicon nanocrystals (Si-Ncs) embedded in a SiO 2 matrix have been investigated using atom probe tomography. It turns out that both As and P atomic distributions have the same behavior in such system, withthe efficient incorporation of impurities in the core of Si-Ncs even in the smallest ones (<2 nm). The impurity level measured in Si-Ncs is strongly size-dependent, and statistically, the smallest Si-Ncs can contain the heaviest doping composition. Moreover, this study reveals an influence of the dopant nature on the kinetic growth of Si-Ncs, leading to the clustering of larger nanocrystals in P-doped samples.
Fichier principal
Vignette du fichier
2019_Demoulin_JPCC.pdf (7.58 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02082140 , version 1 (07-05-2020)

Identifiants

Citer

Rémi Demoulin, Manuel Roussel, Sébastien Duguay, Dominique Muller, Daniel Mathiot, et al.. Atomic-Scale Characterization of N-Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography. Journal of Physical Chemistry C, 2019, 123 (12), pp.7381-7389. ⟨10.1021/acs.jpcc.8b08620⟩. ⟨hal-02082140⟩
80 Consultations
162 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More