W.H. Chen, R. Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, et al.. Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography.
Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32.
⟨hal-01953261⟩