Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography

W.H. Chen (1) , R. Lardé (1) , Emmanuel Cadel (1) , T. Xu (2) , J.P. Nys (2) , B. Grandidier (2) , D. Stiévenard (2) , Philippe Pareige (1)

1 GPM - Groupe de physique des matériaux
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

In this work, the p-type silicon nanowires (SiNWs) are grown by the Chemical Vapor Deposition (CVD) method using gold as catalyst droplet, silane as precursor and diborane as dopant reactant and are analyzed at the atomic scale using the three dimensional laser assisted Atom Probe Tomography (APT). This paper reports the preparation of SiNWs and their observation. A three dimensional dopant distribution and its accurate concentration are determined. The possible dopant incorporation pathway into an individual SiNW is also discussed.

Keywords: Atom probe; Dopant; Silicon nanowire

Domains: Physics [physics]; Condensed Matter [cond-mat]

W.H. Chen, R. Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, et al.. Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography. Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32. ⟨hal-01953261⟩