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Journal articles
Three-dimensional atomic-scale imaging of boron clusters in implanted silicon
Abstract : The implantation profile of boron in silicon annealed at 600 °C for 1 h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form of tiny platelets (3-6 nm diameter, 2 nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7 at.% B with a core level that reaches 10 at.%. © 2008 Acta Materialia Inc.
https://hal-normandie-univ.archives-ouvertes.fr/hal-01953258
Contributor : Etienne Talbot Connect in order to contact the contributor
Submitted on : Wednesday, December 12, 2018 - 5:18:48 PM
Last modification on : Tuesday, October 19, 2021 - 10:59:38 PM
Contributor : Etienne Talbot Connect in order to contact the contributor
Submitted on : Wednesday, December 12, 2018 - 5:18:48 PM
Last modification on : Tuesday, October 19, 2021 - 10:59:38 PM
