Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

O. Cojocaru-Mirédin (1) , Emmanuel Cadel (1) , F. Vurpillot (1) , Dominique Mangelinck (2) , D. Blavette (1)

1 GPM - Groupe de physique des matériaux
2 AMU - Aix Marseille Université

The implantation profile of boron in silicon annealed at 600 °C for 1 h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form of tiny platelets (3-6 nm diameter, 2 nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7 at.% B with a core level that reaches 10 at.%. © 2008 Acta Materialia Inc.

Keywords: Boron; Clustering; Implanted silicon; Laser atom probe tomography; Microelectronics

Domains: Physics [physics]; Condensed Matter [cond-mat]

O. Cojocaru-Mirédin, Emmanuel Cadel, F. Vurpillot, Dominique Mangelinck, D. Blavette. Three-dimensional atomic-scale imaging of boron clusters in implanted silicon. Scripta Materialia, 2009, 60 (5), pp.285-288. ⟨10.1016/j.scriptamat.2008.10.008⟩. ⟨hal-01953258⟩