Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

O. Cojocaru-Mirédin; Emmanuel Cadel; F. Vurpillot; D. Mangelinck; D. Blavette

Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

O. Cojocaru-Mirédin ¹ Emmanuel Cadel ¹ F. Vurpillot ¹ D. Mangelinck ² D. Blavette ¹

1 GPM - Groupe de physique des matériaux

Abstract : The implantation profile of boron in silicon annealed at 600 °C for 1 h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form of tiny platelets (3-6 nm diameter, 2 nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7 at.% B with a core level that reaches 10 at.%. © 2008 Acta Materialia Inc.

Keywords : Microelectronics Laser atom probe tomography Boron Clustering Implanted silicon

Type de document :

Article dans une revue

Domaine :

Physique [physics] / Matière Condensée [cond-mat]

Liste complète des métadonnées

https://hal-normandie-univ.archives-ouvertes.fr/hal-01953258
Contributeur : Etienne Talbot <>
Soumis le : mercredi 12 décembre 2018 - 17:18:48
Dernière modification le : jeudi 16 mai 2019 - 13:18:03

Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

Identifiants

Collections

Citation

Exporter

Métriques

27

Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

Identifiants

Collections

Citation

Exporter

Partager

Métriques

27