Three-dimensional atomic-scale imaging of boron clusters in implanted silicon

O. Cojocaru-Mirédin 1 Emmanuel Cadel 1 F. Vurpillot 1 Dominique Mangelinck 2 D. Blavette 1
1 GPM - Groupe de physique des matériaux
2 AMU - Aix Marseille Université
Abstract : The implantation profile of boron in silicon annealed at 600 °C for 1 h as given by laser-assisted wide-angle atom probe was found to be in good agreement with secondary ion mass spectrometry data. Numerous boron clusters in the form of tiny platelets (3-6 nm diameter, 2 nm thick) were identified and interpreted as boron interstitial clusters (BICs). These BICs contained on average 7 at.% B with a core level that reaches 10 at.%. © 2008 Acta Materialia Inc.
Keywords : Microelectronics Laser atom probe tomography Boron Clustering Implanted silicon
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https://hal-normandie-univ.archives-ouvertes.fr/hal-01953258
Contributeur : Etienne Talbot <>
Soumis le : mercredi 12 décembre 2018 - 17:18:48
Dernière modification le : lundi 23 septembre 2019 - 18:30:11

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COMUE-NORMANDIE | GPM | UNIROUEN | CNRS | INSA-ROUEN | UNIV-AMU | INSA-GROUPE

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O. Cojocaru-Mirédin, Emmanuel Cadel, F. Vurpillot, Dominique Mangelinck, D. Blavette. Three-dimensional atomic-scale imaging of boron clusters in implanted silicon. Scripta Materialia, 2009, 60 (5), pp.285-288. ⟨10.1016/j.scriptamat.2008.10.008⟩. ⟨hal-01953258⟩

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