Monolithic crystalline silicon solar cells with SiN layers doped with Tb3+ and Yb3+ rare-earth ions
Résumé
In this study, we propose the fabrication of monolithic crystalline silicon solar cells with Tb 3þ and Yb 3þ-doped silicon nitride (SiN x) layers by low-cost screen-printing methods. The performances of c-Si solar cells can be enhanced by rare-earth ions doped SiN x layers via the mechanism of spectrum conversion. These SiN x doped and codoped thin films were deposited by reactive magnetron co-sputtering and integrated as the antireflection coating layers in c-Si solar cells. The characterizations of SiN x , SiN x :Tb 3þ and SiN x :Tb 3þ-Yb 3þ thin films were conducted by means of photoluminescence, Rutherford backscattering spectroscopy, Ellipsometry spectroscopy and Fourier transform infrared measurements. Their composition and refractive index was optimized to obtain good anti-reflection coating layer for c-Si solar cells. Transmission electron microscopy performs the uniform coatings on the textured emitter of c-Si solar cells. After the metallization process, we demonstrate monolithic c-Si solar cells with spectrum conversion layers, which lead to a relative increase by 1.34% in the conversion efficiency.
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