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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Abstract : 10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al2O3 interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×107 cm−2 to 2×109 cm−2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al2O3 templates which may lead to further improvement of the performance of DUV devices.
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https://hal.archives-ouvertes.fr/hal-01212591
Contributor : Jean Paul Salvestrini Connect in order to contact the contributor
Submitted on : Thursday, January 13, 2022 - 10:42:30 PM
Last modification on : Saturday, January 15, 2022 - 3:08:12 AM
Long-term archiving on: : Friday, April 15, 2022 - 2:02:40 AM

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Xin Li, G. Le Gac, Sophie Bouchoule, Youssef El-Gmili, G. Patriarche, et al.. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm. Journal of Crystal Growth, Elsevier, 2015, 432, pp.37-44. ⟨10.1016/j.jcrysgro.2015.09.013⟩. ⟨hal-01212591⟩

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